Record number :
1139964
Title of article :
Atomic structural environment of Y in the residual glass phase of silicon nitride and α-sialon Original Research Article
Author/Authors :
C.M. Wang، نويسنده , , M Mitomo، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2002
Pages :
8
From page :
3153
To page :
3160
Abstract :
The atomic structural environments around Y ions in the residual glass phase of Si3N4 and α-sialon densified with Y2O3 and Al2O3 have been investigated using extended X-ray absorption fine structure (EXAFS). In the residual glass phase, on average, the Y–O/N nearest neighbor bond length is determined to be 2.30 Å, which corresponds to the Y–O bond length in cubic Y2O3, indicating that O is the dominant nearest neighbor of Y. The fitted apparent Y–O/N nearest neighbor coordination number is ~4, which is apparently lower than that when Y is dissolved in a bulk glass, indicating that Y occupies substitutional Si sites. It is also further suggested that the Y–O/N polyhedron in the residual glass phase in silicon nitride and α-sialon is more distorted in comparison with that when Y is dissolved in a bulk glass phase.
Keywords :
Silicon nitride , EXAFS , Sialon , Y2O3
Journal title :
ACTA Materialia
Serial Year :
2002
Link To Document :
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