Record number :
107458
Title of article :
InGaP/InGaAs PHEMT with high IP3 for low noise applications
Author/Authors :
Y.C.، Lin, نويسنده , , E.Y.، Chang, نويسنده , , G.J.، Chen, نويسنده , , H.M.، Lee, نويسنده , , G.W.، Huang, نويسنده , , D.، Biswas, نويسنده , , C.-Y.، Chang, نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
-776
From page :
777
To page :
0
Abstract :
A low noise InGaP/InGaAs pseudomorphic high-electron-mobility transistor (PHEMT) with high IP3 was developed. The device utilises InGaP as the Schottky layer to achieve a low noise figure and uses AlGaAs as the spacer to reform the electron mobility and contains dual delta doped layers to improve the device linearity.
Keywords :
Hydrograph
Journal title :
IEE Electronics Letters
Serial Year :
2004
Link To Document :
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