S.C.، Moss, نويسنده , , J.H.، Li, نويسنده , , D.W.، Stokes, نويسنده , , R.L.، Forrest, نويسنده , , B.Z.، Nosho, نويسنده , , B.R.، Bennett, نويسنده , , L.J.، Whitman, نويسنده , , M.، Goldenberg, نويسنده ,
Lateral compositional modulation in a (InAs)/sub 13/ (GaSb)/sub 13/ superlattice grown by molecular beam epitaxy for infrared detector applications has been investigated using high-resolution X-ray diffraction. X-ray diffraction reciprocal space maps exhibit distinct lateral satellite peaks about the vertical superlattice peaks; however, the pattern is tilted with respect to the  direction. This tilt is directly related to the stacking of the layers as revealed by cross-sectional scanning tunnelling microscopy (XSTM) images. XSTM shows the morphology of the structure to consist of InAs- and GaSb-rich regions with a modulation wavelength of ~1200 (Aring) and a lateral composition wavelength of 554 +- 3 (Aring). The modulation only occurs along one in- plane direction, resulting in InAs ʹnanowiresʹ along the [11~0] direction, which are several microns long. The possible causes of the lateral composition modulation and its impact on device performance are discussed.