Record number :
1067112
Title of article :
Effect of sputtering input powers on CoSi2 thin films prepared by magnetron sputtering
Author/Authors :
F.X. Cheng، نويسنده , , C.H. Jiang، نويسنده , , J.S. Wu، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2005
Pages :
4
From page :
369
To page :
372
Abstract :
CoSi2 thin films were prepared by radio frequency magnetron sputtering using CoSi2 alloy target. Effect of sputtering input powers on characteristics of CoSi2 thin films was researched by X-ray diffraction (XRD), transparent electron microscope (TEM), energy dispersive X-ray analysis and four points probe, etc. It was shown that the deposition rate increased lineally, the selective sputtering of silicon was strengthened, the (1 1 1) texture increased, and the resistivity decreased when the input powers were increased.
Keywords :
CoSi2 , Sputtering input powers , Grain diameter , Resistivity , Magnetron sputtering
Journal title :
Materials and Design
Link To Document :