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Title of article :
Electrical and structural characteristics of PbTiO3 thin films with ultra-thin Al2O3 buffer layers
Author/Authors :
C.L Sun، نويسنده , , S.Y Chen، نويسنده , , M.Y Yang، نويسنده , , Albert Chin، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2003
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Abstract :
Polycrystalline PbTiO3 thin films have been prepared on Si substrates with ultra-thin SiO2 and Al2O3 buffer layers by chemical solution deposition, respectively. Although capacitance–voltage characteristics show hysteresis loops in both cases, the memory window of PbTiO3/Al2O3 stacked dielectric is 3.3 V larger than that on SiO2. In addition, well-behaved capacitance–voltage characteristics are only obtained in PbTiO3/Al2O3 and the PbTiO3 films on Al2O3 have the dielectric constant of 116 larger than 42 of PbTiO3 films on SiO2. The leakage current density of PbTiO3/Al2O3 dielectric is 1.3×10−7 A cm−2 at −2.5 V, which is low enough for deep sub-μm application.
Keywords :
Capacitance–voltage , Dielectric constant , Thin films , PbTiO3
Journal title :
Materials Chemistry and Physics
Serial Year :
Link To Document :