Record number :
1060566
Title of article :
Influence of ions energy on the bonding structure of amorphous carbon nitride films
Author/Authors :
Aixiang Wei، نويسنده , , Dihu Chen، نويسنده , , Youguo Zhou، نويسنده , , Peixing Lin، نويسنده , , Zenghong Yang، نويسنده , , Jiahai Fan، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2001
Pages :
4
From page :
245
To page :
248
Abstract :
Amorphous carbon nitride films were prepared at various substrate bias voltage Vb using magnetic filtered plasma stream. The plasma stream was formed by sputtering a high-purity graphite target in nitrogen atmosphere. The incident ions energy was varied by applying different negative bias voltage on the substrate platform. The atomic bond structure and chemical states of C and N atoms in the films as a function of bias voltage were studied by Raman spectra, FTIR spectra and atomic force microscopy (AFM). The results show that amorphous carbon nitride films with larger sp3 CN bond and sp2 CN bond can be formed in a Vb range from −60 to −120 V. The effect of incident ions energy on atomic bond structure and surface roughness of carbon nitride films was discussed.
Keywords :
Carbon nitride , Raman spectra , Bonding structure , Ions energy
Journal title :
Materials Chemistry and Physics
Serial Year :
2001
Link To Document :
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