Record number :
Title of article :
Single-electron transport through an individual InAs SAQD embedded in a graded-dope semiconductor nano-pillar
Author/Authors :
T Sato، نويسنده , , T Yamaguchi، نويسنده , , W Izumida، نويسنده , , S Tarucha، نويسنده , , H.Z. Song، نويسنده , , T Miyazawa، نويسنده , , Y Nakata، نويسنده , , T Ohshima، نويسنده , , N Yokoyama، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2004
Pages :
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Abstract :
By using the semiconductor nano-pillar with a graded-dope configuration, we implemented the measurement for a single-electron transport through an individual InAs self-assembled quantum dot (SAQD). An atomic-force microscope observation showed that the SAQD had a disk-like shape with a diameter of View the MathML source. We succeeded in observing a significant diamagnetic shift of the Coulomb oscillation peak under the magnetic field applied perpendicular to the disk plane. The measurement gave us a lateral confinement energy of View the MathML source and an electron effective mass of 0.039, which provided us with quantitative evidence that the constituent material of the observed quantum dot originates from the InAs SAQD.
Keywords :
Single-electron transport , Quantum dot , Self-assembled InAs dot , Fock–Darwin state
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Link To Document :