Record number :
1050555
Title of article :
InGaAs/InGaAs strain-compensated quantum well cells for thermophotovoltaic applications
Author/Authors :
Carsten Rohr، نويسنده , , James P. Connolly، نويسنده , , Nicholas Ekins-Daukes، نويسنده , , Paul Abbott، نويسنده , , Ian Ballard، نويسنده , , initK.W.J.Keith W.J. Barnham، نويسنده , , Massimo Mazzer، نويسنده , , Chris Button، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2002
Pages :
4
From page :
158
To page :
161
Abstract :
Strain-compensated layers in photovoltaic devices can yield unique advantages as the absorption threshold can be extended towards longer wavelengths beyond that of the lattice-matched material, which is particularly important for thermophotovoltaic (TPV) applications. In such a nanostructure, where InGaAs barriers and InGaAs quantum wells of appropriate compositions are strain compensated on an InP substrate, the absorption of a quantum well cell (QWC) can be extended to View the MathML source. Due to the higher band-gap barriers, the dark current remains at a low level more appropriate to lattice-matched InGaAs. Great care has to be taken in design and growth to achieve a situation that is close to strain balance with zero stress. Results are presented on a strain-compensated QWC that absorbs out to View the MathML source. Predictions show that strain-compensated InGaAs/InGaAs QWCs have superior performance when compared with bulk InGaAs on InP monolithic interconnected modules and GaSb TPV cells.
Keywords :
Quantum wells , Strain-compensated , InGaAs , Thermophotovoltaics
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2002
Link To Document :
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