Record number :
1049866
Title of article :
Insulator-GaN interface structures formed by plasma-assisted chemical vapor deposition
Author/Authors :
Ryuusuke Nakasaki، نويسنده , , Tamotsu Hashizume a، نويسنده , , Hideki Hasegawa a، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2000
Pages :
5
From page :
953
To page :
957
Abstract :
Interface properties of Si3N4/GaN and SiO2/GaN structures produced by CVD processes were investigated by X-ray photoelectron spectroscopy (XPS) and capacitance–voltage (C–V) methods, paying attention to surface treatments prior to insulator deposition. Electron cyclotron resonance assisted plasma chemical vapor deposition (ECR-PCVD) and radio frequency-assisted PCVD (RF-PCVD) were used. For the interfaces having natural oxides of GaN, the surface Fermi level was strongly pinned due to the existence of high density of interface states. A surface treatment in NH4OH solution was found to be effective in reducing natural oxides and interface states. Further reduction of interface states was realized by the N2 plasma treatment of GaN surfaces just prior to the deposition of insulating films. A minimum value of interface state density of View the MathML source was obtained for the Si3N4/n-GaN structures formed by ECR-PCVD with a combination of NH4OH treatment and N2 plasma treatment.
Keywords :
GaN , Interface state , ECR , PCVD , XPS , MIS structure
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Link To Document :