Record number :
Title of article :
Carrier emission processes in InAs quantum dots
Author/Authors :
C.M.A Kapteyn، نويسنده , , M Lion، نويسنده , , F Heinrichdorff، نويسنده , , R Heitz، نويسنده , , M Grundmann، نويسنده , , D Bimberg، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2000
Pages :
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Abstract :
We investigate electron emission from self-organized InAs quantum dots (QDs) in the presence of an external electric field by time-resolved capacitance spectroscopy. The contribution of two processes is identified; direct tunneling and a thermally activated tunnel process via excited QD states. The total emission rate is found to depend crucially on the contributing tunnel processes. From our experiments, the QD level structure is determined.
Keywords :
Quantum dot , Capacitance spectroscopy , Carrier emission
Journal title :
Physica E Low-dimensional Systems and Nanostructures
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Link To Document :