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Title of article :
Negative magnetoresistance due to charge fluctuation in mono-layer graphene at the minimum conductivity point
Author/Authors :
Ryuta Yagi، نويسنده , , Seiya Fukada، نويسنده , , Hiroaki Kobara، نويسنده , , Norio Ogita، نويسنده , , Masayuki Udagawa، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2009
Pages :
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Abstract :
We have measured magnetotransport of monolayer graphene at the minimum conductivity point in detail to study negative magnetoresistance that often appears in moderately high magnetic field. By studying several samples with different qualities, we found that negative magnetoresistance originated from potential fluctuation that leads to the residual carriers at the minimum conductivity point.
Keywords :
Monolayer graphene , Magnetoresistance , Minimum conductivity point , Potential fluctuation
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Link To Document :