C.M. Shin، نويسنده , , J.Y. Lee، نويسنده , , J.H. Heo، نويسنده , , J.H. Park، نويسنده , , C.R. Kim، نويسنده , , H. Ryu، نويسنده , , J.H. Chang، نويسنده , , C.S. Son، نويسنده , , W.J. Lee، نويسنده , , S.T. Tan، نويسنده , , J.L. Zhao، نويسنده , , X.W. Sun، نويسنده ,
In this study, the effects of the annealing duration of a zinc oxide (ZnO) buffer layer on structural and optical properties of ZnO rods grown by a hydrothermal process are discussed. A ZnO buffer layer was deposited on p-type Si (1 1 1) substrates by the metal organic chemical vapor deposition (MOCVD) method. After that, ZnO rods were grown on the ZnO-buffer/Si (1 1 1) substrate by a hydrothermal process. In order to determine the optimum annealing duration of the buffer layer for the growth of ZnO rods, durations ranging from 0.5 to 30 min were tried. The morphology and crystal structure of the ZnO/ZnO-buffer/Si (1 1 1) were measured by field emission scanning electron microscopy (FE-SEM) and x-ray diffraction (XRD). The optical properties were investigated by photoluminescence (PL) measurement.