Record number :
1012116
Title of article :
Effects of the annealing duration of the ZnO buffer layer on structural and optical properties of ZnO rods grown by a hydrothermal process
Author/Authors :
C.M. Shin، نويسنده , , J.Y. Lee، نويسنده , , J.H. Heo، نويسنده , , J.H. Park، نويسنده , , C.R. Kim، نويسنده , , H. Ryu، نويسنده , , J.H. Chang، نويسنده , , C.S. Son، نويسنده , , W.J. Lee، نويسنده , , S.T. Tan، نويسنده , , J.L. Zhao، نويسنده , , X.W. Sun، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2009
Pages :
5
From page :
8501
To page :
8505
Abstract :
In this study, the effects of the annealing duration of a zinc oxide (ZnO) buffer layer on structural and optical properties of ZnO rods grown by a hydrothermal process are discussed. A ZnO buffer layer was deposited on p-type Si (1 1 1) substrates by the metal organic chemical vapor deposition (MOCVD) method. After that, ZnO rods were grown on the ZnO-buffer/Si (1 1 1) substrate by a hydrothermal process. In order to determine the optimum annealing duration of the buffer layer for the growth of ZnO rods, durations ranging from 0.5 to 30 min were tried. The morphology and crystal structure of the ZnO/ZnO-buffer/Si (1 1 1) were measured by field emission scanning electron microscopy (FE-SEM) and x-ray diffraction (XRD). The optical properties were investigated by photoluminescence (PL) measurement.
Keywords :
Buffer layer annealing duration , ZnO , Hydrothermal process
Journal title :
Applied Surface Science
Serial Year :
2009
Link To Document :
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