Record number :
1011444
Title of article :
Preparation and infrared emissivity of ZnO: Al (AZO) thin films
Author/Authors :
Dongmei Zhu، نويسنده , , Kun Li، نويسنده , , Xian-Fa Luo، نويسنده , , Wancheng Zhou، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2009
Pages :
4
From page :
6145
To page :
6148
Abstract :
ZnO:Al(AZO) thin films with different Al-doped concentration were developed under different temperature. The effects of the temperature and Al-doped concentration on the infrared emissivity were investigated. Results show that the crystalline phase of the AZO films is hexagonal wurtzite which is the same as that of the un-doped ZnO film. The crystalline size become larger and the particle shapes become more regular with the increase of temperature, which lead to the increase of resistivity and the decreases of the infrared emissivity.
Keywords :
Thin film , Crystallization , Infrared emissivity
Journal title :
Applied Surface Science
Link To Document :