Record number :
1011150
Title of article :
Influence of substoichiometer on the laser-induced damage characters of HfO2 thin films
Author/Authors :
Dongping Zhang، نويسنده , , Congjuan Wang، نويسنده , , Ping Fan، نويسنده , , Xingmin Cai، نويسنده , , Guangxing Liang، نويسنده , , Jianda Shao، نويسنده , , Zhengxiu Fan، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2009
Pages :
4
From page :
4646
To page :
4649
Abstract :
HfO2 is one of the most important high refractive index materials for depositing high power optical mirrors. In this research, HfO2 thin films were prepared by dual-ion beam reactive sputtering method, and the laser-induced damage thresholds (LIDT) of the sample were measured in 1-on-1 mode for laser with 1064 nm wavelength. The results indicate that the LIDT of the as-grown sample is only 3.96 J/cm2, but it is increased to 8.98 J/cm2 after annealing under temperature of 200 °C in atmosphere. By measuring the laser weak absorption and SIMS of the samples, we deduced that substoichiometer is the main reason for the low LIDT of the as-grown sample, and the experiment results were well explained with the theory of electronic-avalanche ionization.
Keywords :
Thin film , Dual-ion-beam sputtering , Substoichiometer
Journal title :
Applied Surface Science
Link To Document :