Record number :
1010990
Title of article :
Nickel doped indium tin oxide anode and effect on dark spot development of organic light-emitting devices
Author/Authors :
C.M. Hsu، نويسنده , , C.S. Kuo، نويسنده , , W.C. Hsu، نويسنده , , W.T. Wu، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2009
Pages :
5
From page :
3759
To page :
3763
Abstract :
This article demonstrated that introducing nickel (Ni) atoms into an indium tin oxide (ITO) anode could considerably decrease ITO surface roughness and eliminate the formation of dark spots of an organic light-emitting device (OLED). A dramatic drop in surface roughness from 6.52 nm of an conventional ITO to 0.46 nm of an 50 nm Ni(50 W)-doped ITO anode was observed, and this led to an improved lifetime performance of an Alq3 based OLED device attributed to reduced dark spots. Reducing thickness of Ni-doped ITO anode was found to worsen surface roughness. Meanwhile, the existence of Ni atoms showed little effect on deteriorating the light-emitting mechanism of OLED devices.
Keywords :
nickel , ITO , OLED , dark spot
Journal title :
Applied Surface Science
Serial Year :
2009
Link To Document :
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