Record number :
1010967
Title of article :
Effect of Cr and V dopants on the chemical stability of AZO thin film
Author/Authors :
Y.C. Lin، نويسنده , , J.H. Jiang، نويسنده , , W.T. Yen، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2009
Pages :
6
From page :
3629
To page :
3634
Abstract :
The effect of the dopants of Cr and V on the optoelectronic properties of AZO thin film by pulsed DC magnetron sputtering has been investigated. We also use HCl and KOH solutions to conduct the chemical stability of AZO:Cr:V thin film. The experimental results show that the optimum AZO optoelectronic properties without Cr and V doping obtain the resistivity of 9.87 × 10−4 Ω cm, optical transmittance of 84% and surface roughness rms value of 2.6 nm. The chemical stability of AZO will increase after Cr and V doping. Under the added V = 0.19 wt.%, Cr = 0.56 wt.%, AZO:Cr:V thin film showed 52% increased chemical stability and 128% decrease in surface roughness after etching (the resistivity was 3.62 × 10−3 Ω cm and optical transmittance 81%). From the experimental results, the higher resistivity obtained after KOH etching compared with after HCl etching. The reason is that the Zn/Al ratio will reduce after etching and cause the AZO film carrier density to reduce as well. However, the optical transmittance obtained after KOH etching will be higher than that after HCl etching. This is because that a better surface roughness after KOH etching obtained than after HCl etching.
Keywords :
Pulsed DC magnetron sputtering , Doping , Chemical stability , Transparent conducting oxide , AZO
Journal title :
Applied Surface Science
Serial Year :
2009
Link To Document :
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