Record number :
1009836
Title of article :
Influence of primary ion beam irradiation conditions on the depth profile of hydrogen in tantalum film
Author/Authors :
T. Asakawa ، نويسنده , , D. Nagano، نويسنده , , S. Denda، نويسنده , , K. Miyairi، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Pages :
4
From page :
1387
To page :
1390
Abstract :
In order to confirm the possibility that hydrogen in Ta film migrates during SIMS measurement, the influence of primary ion beam irradiation conditions on the depth profile of hydrogen in a Ta film was investigated. Deuterium implanted in a Ta2O5/Ta/Ta2O5 structure was analyzed using Cs+ irradiation interruption. The result shows that hydrogen was discharged from the Ta film to the vacuum of the sample chamber during SIMS measurements with a Cs+ ion beam. The deuterium profile of the Ta film analyzed with an O2+ primary ion beam differed from those with Cs+ or Ar+ irradiations, and it depended on the incidence angle of the O2+ beam. According to these results, we propose a model where the hydrogen is discharged from Ta films to the vacuum of the sample chamber when Ta2O5 film is removed with Cs+ or Ar+ beam irradiation, but the hydrogen is not discharged when Ta2O5 film is formed on the Ta surface using O2+ primary beam irradiation.
Keywords :
Tantalum oxide , Tantalum , deuterium , MIM , SIMS , Hydrogen
Journal title :
Applied Surface Science
Link To Document :