Record number :
1009785
Title of article :
Influence of the vacuum level upon the growth of carbon nanotubes on silicon carbide surface
Author/Authors :
J. Yoshida، نويسنده , , Y. Yonekubo، نويسنده , , T. Nakanishi، نويسنده , , H. Okado، نويسنده , , M. Naitoh، نويسنده , , T. Sakata، نويسنده , , H. Mori، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Pages :
5
From page :
7723
To page :
7727
Abstract :
We have investigated the influence of the vacuum level upon the growth of carbon nanotubes (CNTs) on 6H–SiC (image) surface. CNTs of about 160 nm in length were formed densely and uniformly on the 6H–SiC surface during annealing at 1700 °C in a high vacuum (∼10−2 Pa). CNTs of about 1 μm in length were formed during annealing at 1700 °C in an ultra-high vacuum (∼10−7 Pa). However, CNTs were not formed and SiO2 layers were formed on the SiC surface at 1700 °C in air. It is found that longer CNTs can grow up in an ultra-high vacuum, moreover, a little aligned and low-density graphite layers, or carbon nanofibers can also grow up.
Keywords :
Carbon nanotubes , Silicon carbide , TEM , Carbon nanofiber
Journal title :
Applied Surface Science
Link To Document :