Record number :
1002680
Title of article :
Nitrogen binding behavior in ZnO films with time-resolved cathodoluminescence
Author/Authors :
Y.F. Mei، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Pages :
4
From page :
8131
To page :
8134
Abstract :
ZnO film with (1 0 0) orientation was produced on silicon substrate and doped with nitrogen using plasma immersion ion implantation. The effects due to N doping were investigated using cathodoluminescence (CL). In the heavily nitrogen-doped ZnO film, the intensity of ultraviolet (UV) band decreases and that of the visible band increases as a function of the electron bombardment cycle i.e. time. Based on the X-ray photoelectron spectroscopy (XPS) analysis, the unstable Zn–N bond is responsible for the CL behavior and the experimental results agree well with the first-principle calculation. Our work is helpful to our understanding of the role of p-type dopants in ZnO.
Keywords :
Photoelectron spectroscopy , Nitrogen binding , cathodoluminescence
Journal title :
Applied Surface Science
Serial Year :
2006
Link To Document :
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