Record number :
1001000
Title of article :
Effect of thermal annealing on the optical and electronic properties of ZnO thin films grown on p-Si substrates
Author/Authors :
W.G. Han، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
7
From page :
384
To page :
390
Abstract :
The effects of annealing on the optical and the electronics properties of ZnO thin films grown on p-Si(1 0 0) substrates by using radio frequency magnetron sputtering were investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), photoluminescence (PL), and X-ray photoelectron spectroscopy (XPS) measurements. The XRD patterns and pole figures showed that the crystallinity of the ZnO films grown on p-Si(1 0 0) substrates was improved by thermal treatment. XRD patterns, pole figures, and TEM images showed that the as-grown and the annealed ZnO films grown on Si(1 0 0) substrates had a c-axis preferential orientation in the [0 0 0 1] crystal direction. The PL spectra showed that luminescence peaks related to the free excitons and the deep levels appeared after annealing. The XPS spectra showed that the peak positions corresponding to the O 1s and the Zn 2p shifted slightly after thermal treatment. These results can help improve understanding of thermal effects on the optical and the electronic properties of ZnO thin films grown on p-Si(1 0 0) substrates.
Keywords :
ZnO/p-Si , Optical properties , Electronic properties , Thermal annealing
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2005
Link To Document :
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