Record number :
1000995
Title of article :
Influence of sulfidation ambience on the properties of nanocrystalline ZnS films prepared by sulfurizing the as-sputtered ZnO films
Author/Authors :
Rengang Zhang، نويسنده , , Baoyi Wang، نويسنده , , Hui Zhang، نويسنده , , Long Wei*، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
6
From page :
340
To page :
345
Abstract :
Nanocrystalline ZnS films have been prepared on glass and quartz substrates by sulfurizing the as-sputtered ZnO films at 500 8C in H2S or sulfur-vapor. The films are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive analysis of X-ray (EDX) and UV-visible transmission spectra. It is found that the total conversion of ZnO films in sulfur-vapor to the hexagonal ZnS films requires 11 h much longer than that in H2S, due to the low S content in sulfur-vapor. And the high ZnS (0 0 2) preferred orientation can be observed for ZnS films formed in H2S or low pressure sulfur-vapor. The results also show that ZnS films formed in sulfur-vapor have about 200 nm grains greater than those formed in H2S, because the solid-phase recrystallization during the sulfidation process is favorable in sulfur-vapor. Besides, the great broadening of the absorption edge in the optical transmission spectra, and the small band-gap energies compared to that of ZnS films formed in H2S, are obtained for ZnS films produced in sulfur-vapor, which can arise from existence of some ZnO and residual sulfur phase, and sulfur interstitial atoms in the films
Keywords :
ZnO films , ZnS films , Sulfidation
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2005
Link To Document :
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