Record number :
1000986
Title of article :
The effect of the oxygen concentration and the rf power on the zinc oxide films properties deposited by magnetron sputtering
Author/Authors :
I. Sayago، نويسنده , , M. Aleixandre، نويسنده , , L. Are´s، نويسنده , , M.J. Ferna´ndez، نويسنده , , J.P. Santos، نويسنده , , J. Gutie´rrez، نويسنده , , M.C. Horrillo، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
8
From page :
273
To page :
280
Abstract :
The influence of the oxygen concentration and the rf power variation on the zinc oxide films structural properties were studied. ZnO films were deposited on silicon substrate by rf magnetron sputtering in reactive plasma using a zinc oxide target. Crystalline structures and roughness characteristics of the films were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements, respectively. Deposition conditions were optimized to obtain films of good quality suitable for the fabrication of surface acoustic wave (SAW) devices. The optimal parameters to obtain a good piezoelectric material have been: rf power 50 W and reactive plasma
Keywords :
ZNO , Piezoelectric material , Atomic force microscopy , magnetron sputtering , X-ray diffraction
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2005
Link To Document :
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