Record number :
1000969
Title of article :
Effect of Au overlayer on PtSi ohmic contacts with n-InP
Author/Authors :
W.C. Huang، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
8
From page :
141
To page :
148
Abstract :
This investigation considers ohmic contact structures Si/Pt/n-InP and Au/Si/Pt/n-InP. The processing conditions achieving low specific contact resistance were derived. Experimental results indicated that the Si/Pt/n-InP showed poor ohmicity; while a low specific contact resistance of 3.32 10 5 V cm2 was obtained on the Au/Si/Pt/n-InP contact after rapid thermal annealing (RTA) at 550 8C for 30 s. Additionally, the Si/Pt/n-InP contact underwent a sintering reaction. The Au/Si/Pt/n-InP was formed in an alloying reaction and the contact morphology was a little rough after thermal annealing. The ohmicity of the Au/Si/Pt/n-InP contact was attributed to Si doping, and determined by the alloyed reaction and the decomposition of the epitaxial layer of the metallization/InP interface. The Au/Si/Pt/n-InP also exhibited good thermal stability without degradation, with a low maintained specific contact resistance of 2.77 10 5 V cm2 after 400 8C for 80 h of thermal aging.
Keywords :
Ohmic contact , Pt , InP , Specific contact resistance
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2005
Link To Document :
بازگشت