Record number :
Title of article :
Fabrication of organic static induction transistors with higher order structures
Author/Authors :
Joseph Chennemkeril Mathew، نويسنده , , Naoki Hirashima، نويسنده , , Masakazu Nakamura، نويسنده , , Masaaki Iizuka، نويسنده , , Kazuhiro Kudo، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
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Abstract :
Organic static induction transistors (SITs) were fabricated with a Au(source)/organic/patterned-Al(gate)/organic/patterned- Au(drain) structure employing a new concept, ‘spontaneous patterning of higher order structures’ (SPHOS). A selective mechanical exfoliation process was developed to replicate the pattern of gate electrode after a pre-patterned drain electrode. The I–V curve measured between the gate and the drain electrodes exhibited a good Schottky characteristic and the drain current of the SIT with higher order structure showed a clear modulation by the gate voltage.
Keywords :
organic transistors , Static induction transistor , Nanostructures , Ultrasonic process , Transistor characteristics
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
Link To Document :