Record number :
Title of article :
Effects of Zn-doping on red-luminescence in Eu-doped (Mg,Ca)S phosphor films
Author/Authors :
Seiichi Tokunaga، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
From page :
To page :
Abstract :
For the improvement of emission efficiency, ZnS-doped Mg0.8Ca0.2S:Eu phosphor film was made using rf-magnetron sputtering method. When the concentration of ZnS in the film is 4%, the photoluminescence intensity is about three times higher than that of ZnS-non-doped Mg0.8Ca0.2S:Eu film with keeping pure red emission ( 650 nm). The crystal planes are oriented in (2 0 0) direction and make a solid solution with ZnS. Enhancement in photoluminescence (PL) intensity is closely related to the change of the crystal quality.
Keywords :
Sputtering , Photoluminescence , Sulfide , Phosphor
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
Link To Document :