Record number :
1000922
Title of article :
Novel green thin-film electroluminescent devices utilizing ZnS nanocrystals doped with Tb compounds
Author/Authors :
T. Toyama*، نويسنده , , K. Yoshimura، نويسنده , , M. Fujii، نويسنده , , H. Haze، نويسنده , , H. Okamoto، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
4
From page :
524
To page :
527
Abstract :
Green emission from ZnS nanocrystals (NCs) doped with Tb compounds has been investigated employing a double insulating thin-film electroluminescent device (TFELD) structure which has been used for conventional ac-driven TFELDs. The EL emission mechanism is discussed, centered on the generation of electric-field-induced high-energy electrons in NCs. The influence of Tb concentrations and co-doping of Tb compounds on the device performance is presented. Finally, green EL emission with a maximum luminance of 30 cd/m2 at 90 V0–p employing ZnS:Tb,O,F NCs as the active layer is demonstrated
Keywords :
Nanocrystals , electroluminescence , thin films , Display devices , Sputtering
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2005
Link To Document :
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