Record number :
1000903
Title of article :
Ultraviolet enhanced Si-photodetector using p-NiO films
Author/Authors :
Jeong-M. Choi، نويسنده , , Seongil Im*، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
4
From page :
435
To page :
438
Abstract :
We report on the properties of a heterojunction photodiode composed of p-type NiO and n-type Si. This photodetector was fabricated by evaporating NiO powders on Si (1 0 0) substrate. Our deposited p-NiO film was found to have a hole concentration of 1019 cm 3 according to Hall measurements. Current–voltage (I–V) characteristics of our photodiode were measured in the dark and under ultra-violet (UV)–vis light illuminations (290 nm, 325 nm, 460 nm, 540 nm, and 633 nm) at room temperature (RT). The photo-responsivity of our photodiode appeared almost saturated even at 0 V, showing good photo-voltaic properties. The responsivity was as high as 0.36 A/W at 0 Vand 0.40 A/W at 30 V for visible light (633 nm) while it was 0.15 A/W at 0 V and 0.17 A/W at 30 V for UV (290 nm).
Keywords :
I–V characteristics , UV–vis light , Photo-responsivity , photodiode
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2005
Link To Document :
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