Record number :
1000900
Title of article :
Control of chemical and electrical features near the grain boundary of the semiconducting BaTiO3 oxides
Author/Authors :
M.-B. Park، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
4
From page :
422
To page :
425
Abstract :
The chemical and electrical characteristics of the grain boundary of the polycrystalline semiconducting BaTiO3 ceramics, which were synthesized by hot-press sintering Mn-coated semiconducting BaTiO3 powders, were investigated in terms of process parameters such as the amount of coating materials. Diffusion kinetic parameters of diffusing ions at particular heattreatment conditions were obtained by fitting experimental data with computer-simulated results as well as electrical features near the grain boundary of the ceramics. Electrical features of semiconducting oxides were calculated from chemical distribution near the grain boundary; these values are similar to those obtained from impedance analysis. It indicated that this synthesis method can be used for fine control of chemical and electrical features near the grain boundary of semiconducting oxides.
Keywords :
Diffusion kinetic parameters , Potential barrier height , BaTiO3 , Grain boundary
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2005
Link To Document :
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