Record number :
1000888
Title of article :
Sb excimer-laser doping in ZnO films prepared by oxidation of sulfide on Si
Author/Authors :
K. Ohara، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
4
From page :
369
To page :
372
Abstract :
ZnO thin films were formed by oxidation of ZnS films on Si substrates. Sb doping of ZnO films was tried by laser irradiation of ZnO deposited with Sb. Although p-type ZnO:Sb film was not obtained, it was observed that the laser irradiation increased the near-ultraviolet (NUV) emission intensity, whereas the visible emission of oxygen vacancies decreased. Moreover, the resistance of the laser-irradiated ZnO:Sb films was higher than that of films without irradiation. These results show that Sb compensates the oxygen vacancy; as a result, the electrons are neutralized by holes generated by the dopant (Sb).
Keywords :
ZNO , Thin film , Epitaxial growth , Laser doping , Conduction control
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2005
Link To Document :
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