Record number :
1000882
Title of article :
Zn3N2 compensated ZnTe films and ZnTe–ZnSe superlattices grown by hot wall epitaxy
Author/Authors :
S. Sakakibara )، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
4
From page :
343
To page :
346
Abstract :
Nitrogen-doped (N-doped) p-type ZnTe films and ZnTe–ZnSe superlattices (SLs) were prepared on GaAs (1 0 0) substrates by hot wall epitaxy (HWE) using NH3 gas and Zn3N2 as a codoping source. We have investigated the compensation effect of Zn3N2 and optimized the growth conditions. Then the nitrogen-doped ZnTe films and ZnTe–ZnSe superlattices of high crystal quality with a high hole concentration were obtained
Keywords :
GaAs substrate , Hot wall epitaxy , ZnTe , ZnSe , Superlattice
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2005
Link To Document :
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