Record number :
1000876
Title of article :
Optical and structural properties of CVD-grown single crystal SiO2 using optically detected XAS
Author/Authors :
T. Nakamura، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
4
From page :
318
To page :
321
Abstract :
Using a new method of low-temperature CVD preparation, very high quality single-crystal quartz can be grown at rates of up to 3 mm h 1. By employing synchrotron radiation methods, the optical and structural properties of these crystals can be interlinked and they are compared with those of high quality hydrothermally grown material. The luminescence excitation spectra, which are very sensitive to the quality of the material, are assessed for both band edge (excitonic) and core level Si Ledge excitations. For the most part, the optical and structural properties of the two types of sample are indistinguishable, verifying the high quality of the material grown by the new method. The only source of difference arises from a weak red luminescence band, thought to originate from NBOHC defects: in CVD material, the L-edges derived from this band reveal some degree of local lattice disorder.
Keywords :
quartz , CVD , OD-XAS , luminescence
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2005
Link To Document :
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