Record number :
1000871
Title of article :
Influence of Si3N4 and ZnS films on transmittance of InAsSb/InAsPSb heterostructures
Author/Authors :
Y.Z. Gao، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
4
From page :
297
To page :
300
Abstract :
The transmittance of InAsSb/InAsPSb heterostructures is remarkably improved by depositing a Si3N4 top layer. This demonstrates its good anti-reflective property. A study of the influence of various factors on the transmittance of the heterostructures is performed. A comparison was made between the transmittances of the heterostructures under different conditions. The different effects of Si3N4 and ZnS top layers on the transmittance of the InAsSb/InAsPSb heterostructures are discussed.
Keywords :
InAsSb/InAsPSb , FTIR , Si3N4 , deposition , transmittance , ZnS
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2005
Link To Document :
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