Record number :
1000869
Title of article :
Morphological investigation of double positioning growth of (1 1 1)-boron phosphide (BP) on the (0 0 0 1)-GaN
Author/Authors :
M. Odawara، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
4
From page :
289
To page :
292
Abstract :
BP layer was grown on a (0 0 0 1)-GaN by atmospheric-pressure metalorganic VPE procedure. The BP layer grew epitaxially on the GaN with relationship: (0 0 0 1), ha-axesi-GaN//(1 1 1),h1 1 0i-BP. On the surface of (1 1 1)-BP layer, crystallites disposed with double positioning configuration were found. The presence of crystallite disposed with the double positioning indicated that the BP layer grew up on the GaN with the manner of ‘‘degenerated epitaxy’’. In the (1 1 1)-BP layer grown through ‘‘degenerated epitaxy’’ manner, crystalline imperfections, such as {1 1 1}-twins were involved
Keywords :
III–V Semiconductors , Metalorganic chemical vapor deposition , characterization
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2005
Link To Document :
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