Record number :
1000868
Title of article :
High-resolution TEM characterization of MOVPE-grown (1 1 1)-BP layer on hexagonal 6H (0 0 0 1)-SiC
Author/Authors :
T. Udagawa، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
4
From page :
285
To page :
288
Abstract :
A BP layer was grown on the (0 0 0 1)-surface of 6H-type hexagonal SiC substrate by atmospheric-pressure metalorganic VPE, and crystallographic feature of the resultant BP/SiC hetero-structure was evaluated by transmission electron microscopy (TEM) and transmission electron diffraction (TED). Analysis of the TED patterns from the hetero-structure gave the following epitaxial relationship: (0 0 0 1), -SiC // (1 1 1), <1 1 0>-BP. Extra diffraction spots in the TED pattern indicated the presence of {1 1 1}-twins in the (1 1 1)-BP layer. High-resolution TEM observation also revealed the presence of random texture which involved irregular configuration of atomic planes in the (1 1 1)-BP layer at the hetero-interface with the (0 0 0 1)- SiC. The MOCVD-grown (1 1 1)-BP layer was deduced to develop on the (0 0 0 1)-SiC, accompanying the formation of the (1 1 1)-twins and of the random texture at the interface with the (0 0 0 1)-SiC.
Keywords :
characterization , III–V Semiconductors , Metalorganic chemical vapor deposition
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2005
Link To Document :
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