Record number :
Title of article :
Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure
Author/Authors :
Kazushi Matsuo*، نويسنده , , Noboru Negoro)، نويسنده , , Junji Kotani*، نويسنده , , Tamotsu Hashizume a، نويسنده , , Hideki Hasegawa a، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
From page :
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Abstract :
Exposure of Pt/GaN and Pt/AlGaN/GaN Schottky diodes to H2 gas at moderately high temperatures around 100 8C resulted in marked increase of forward and reverse currents. Increase was much larger in the Pt/AlGaN/GaN diode than in the Pt/GaN diode. Rapid turn-on responses and somewhat slower turn-off responses were observed with reproducible response magnitudes. A rigorous computer simulation of I–V curves indicated that current changes are due to changes in the Schottky barrier height caused either by H-induced formation of interfacial dipole or by hydrogen passivation of interface states.
Keywords :
GaN , AlGaN , Schottky , Pt , Gas sensor
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
Link To Document :