Record number :
1000864
Title of article :
Effect of treatments of sapphire substrate on growth of GaN film
Author/Authors :
Masatomo Sumiya، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
4
From page :
269
To page :
272
Abstract :
We have studied the surface of sapphire substrate as the first hetero-interface for the growth of wrutzite GaN film. The surface of sapphire substrate was thermally roughened by annealing in H2 or N2 ambient at temperatures more than 1000 8C. This surface plays a decisive role of nuclei site of low-temperature (LT) buffer layer for obtaining GaN film with smooth surface having Ga-face (+c) polarity. By changing the nitridation temperatures of the sapphire substrate, the polarity of GaN film can be controlled from +c to N-face ( c) polarity corresponding to smooth and hexagonal-facetted surface morphology of GaN film, respectively. This indicates that the role of LT-buffer layer might be to prevent the surface of sapphire from unintentional nitridation, which is likely to result in c GaN film by lowering the substrate temperature
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2005
Link To Document :
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