Record number :
Title of article :
Formation of pores in Ge single crystal by laser radiation
Author/Authors :
A. Medvid’ *، نويسنده , , A. Mychko، نويسنده , , A. Krivich، نويسنده , , P. Onufrijevs، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
From page :
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Abstract :
Formation of a porous structure on the surface of Ge single crystals by pulsed YAG:Nd laser irradiation at the intensity of 25 MW/cm2 is reported. An increase of surface recombination velocity on the irradiated surface by a factor of 100 is observed and explained by increase of the geometric area of the surface due to formation of pores. The latter is attributed to inhomogeneous pressure of a pulsed laser beam on the melting irradiated surface of the crystal.
Keywords :
Ge single crystal , Pores , Laser Radiation , Magnetoconcentration effect , AFM
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
Link To Document :