Record number :
Title of article :
Surface-related reduction of photoluminescence in GaAs quantum wires and its recovery by new passivation
Author/Authors :
Nanako Shiozaki، نويسنده , , Sanguan Anantathanasarn)، نويسنده , , Taketomo Sato a، نويسنده , , Tamotsu Hashizume a، نويسنده , , Hideki Hasegawa a، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
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Abstract :
Etched GaAs quantum wires (QWRs) and selectively grown (SG) QWRs were fabricated, and dependence of their photoluminescence (PL) properties on QWR width (W) and QWR distance to surface (d) were investigated. PL intensity greatly reduced with reduction of Wand d, due to non-radiative recombination through surface states. Surface passivation by growing a Si interface control layer (Si-ICL) on group III-terminated surfaces greatly improved PL properties.
Keywords :
quantum wire , Surface passivation , Photoluminescence , AlGaAs , Surface states , GaAS
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
Link To Document :