Record number :
Title of article :
Enhancement of donor ionization in phosphorusdoped n-diamond
Author/Authors :
Yasuo Koide، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
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Abstract :
In order to explore a possibility for controlling an electron concentration in phosphorus-doped n-diamond, electron and ionized-donor concentrations in n-diamond/cBN and n-diamond/AlN heterojunctions are analyzed by self-consistently solving Poisson and Schro¨dinger equations. Although the electron concentration is an order of 1011 cm 3 at room temperature for single n-diamond with a donor concentration of 5 1018 cm 3 and a compensation ratio of 0.01, a modulation-doping technique predicts to provide full ionization of phosphorus donor in the n-diamond/cBN heterostructure and generation of an electron concentration larger than 1018 cm 3 at room temperature
Keywords :
Deep dopant , Ionization energy , Superlattice doping , cBN , n-Type , diamond , ALN , Phosphorus donor
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
Link To Document :