Record number :
1000774
Title of article :
Growth of thick AlGaN by mixed-source hydride vapor phase epitaxy
Author/Authors :
H.S. Ahn، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
5
From page :
178
To page :
182
Abstract :
Growth of a thick AlGaN layer on GaN/Al2O3 substrate is performed by mixed-source hydride vapor phase epitaxy (HVPE) method. The AlGaN material is compounded from chemical reaction between a NH3 and an aluminum-gallium chloride formed by HCl which is flown over metallic Ga mixed with Al. The AlGaN epitaxial layer is analyzed by Auger-electron spectroscopy (AES) and X-ray diffraction (XRD) measurement to characterize the AlGaN. Al concentration is estimated to be in the range of 0.5–6%. We suggest that the metallic Ga mixed with Al can be used as a group III source material in the HVPE growth of the AlGaN layer.
Keywords :
AlGaN , XRD , HVPE , optical property , AES , GaN
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2005
Link To Document :
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