We present single pulse femtosecond laser ablation threshold measurements of InP obtained by optical, scanning electron,
and atomic force microscopy. The experiments were conducted with laser pulses 65–175 fs in duration, in the wavelength range
from 400 to 2050 nm, covering the photon energy region above and below the bandgap of InP. The ablation thresholds
determined from depth and volume measurements varied from 87 mJ/cm2 at 400 nm to 250 mJ/cm2 at 2050 nm. In addition,
crater depths and volumes were measured over a range of laser fluences extending well above the ablation threshold.
Atomic force microscopy1. IntroductionFemtosecond laser ablation of semiconductors hasbeen an , Femtosecond laser ablation of semiconductor , Indium phosphide