Record number :
1000751
Title of article :
Ion bombardment in a normal-gate FED
Author/Authors :
Yingbin Gao، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
5
From page :
19
To page :
23
Abstract :
Due to the electron-gas collision ionization in a FED, positively charged ions bombard the cathode. This can destroy the field emitters and cause instabilities. In this study we have selected a normal-gate sub-cell to calculate the ion bombardment (IB). In the cases of uniform emitting and ring emitting, the process of ion bombardment and cathode damage has been investigated
Keywords :
CNT cathode , Numerical simulation , Ion bombardment
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2005
Link To Document :
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