Record number :
1000739
Title of article :
Ion bombardment induced interface broadening in Co/Cu system as a function of layer thickness
Author/Authors :
A. Barna، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
5
From page :
375
To page :
379
Abstract :
It has been shown recently that in case of bilayers ion bombardment induced interface roughening occurs if the sputtering yields of the adjacent layers are strongly different. Now we checked the effect of this mechanism on AES depth profiling if the thickness at least one of the layers is small compared to the thickness of ion mixed layer. It turned out that in this case the ion bombardment induced interface roughening is negligible, since the ion mixing eliminates the differences of the sputtering yields
Keywords :
AES depth profiling , Ion bombardment induced interface broadening , TRIM simulation , Co/Cu system , Thin film analysis
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2005
Link To Document :
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