Record number :
1000694
Title of article :
Gallium oxide nanomaterials produced on SiO2 substrates via thermal evaporation
Author/Authors :
Nam Ho Kim، نويسنده , , HYOUN WOO KIM، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
6
From page :
29
To page :
34
Abstract :
We have prepared the novel gallium oxide (Ga2O3) nanomaterials on SiO2 substrates by a thermal evaporation of GaN powders.We found that the products consisted of the nanobelts with additional nanostructures formed on the sides of nanobelts. The nanobelts had a single-crystalline monoclinic structure with a width in the range of 100–300 nm. We have discussed the possible mechanism leading to the formation of the Ga2O3 nanomaterials. Photoluminescence spectrum under excitation at 325 nm showed a blue emission
Keywords :
Nanomaterials , gallium oxide , Monoclinic , Evaporation
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2005
Link To Document :
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