Record number :
1000690
Title of article :
Growth of ZnS films by chemical vapor deposition of Zn[S2CN(CH3)2]2 precursor
Author/Authors :
Everett Y.M. Lee، نويسنده , , Nguyen H. Tran*، نويسنده , , Robert N. Lamb، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
4
From page :
493
To page :
496
Abstract :
Crystalline ZnS films have been grown on a variety of substrates using chemical vapor deposition from zinc dimethyl dithiocarbamate Zn[S2CN(CH3)2]2 as a single source precursor. Transmission electron microscopy and X-ray diffraction indicated that the films were composed of a uniform array of columns with cubic [1 1 1] orientation. Depth profile X-ray photoemission spectroscopy indicated that the impurity concentration remained less than 1 atomic percent (at%) in the bulk of the films. Chemical vapor deposition of zinc dimethyl dithiocarbamate offers advantages over previous precursors to improve significantly the physico-chemical properties of ZnS films.
Keywords :
Single source chemical vapor deposition , Zinc sulfide , Dimethyl dithiocarbamate
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2005
Link To Document :
بازگشت