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Title of article :
Epitaxy relationships between Ge-islands and SiC(0 0 0 1)
Author/Authors :
K. A?¨t-Mansour، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
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Abstract :
Reflection high-energy electron diffraction (RHEED) has been used to determine epitaxy relationships and in-plane orientations between Ge and SiC(0 0 0 1). Three monolayers of Ge have been deposited at 500 8C on a graphitized SiC (6H3 6H3)R308 reconstructed surface, this surface supporting epitaxial Ge island growth in a Volmer–Weber mode. Nucleation of relaxed Ge-islands gives rise to transmission electron diffraction patterns allowing to deduce that pure Ge grows according to only one epitaxy relationship Ge{1 1 1}//SiC(0 0 0 1). These {1 1 1}-Ge-islands have two in-plane orientations, a preferential one, Geh-1-12i//SiCh1-100i and a minority one, Geh-1-12i//SiCh10-10i, deduced one from the other by a 308 rotation around the h1 1 1i-Ge (or [0 0 0 1]-SiC) growth axis. Due to the three-fold symmetry of the {1 1 1}-Ge plane, each in-plane orientation is degenerated into two twin orientations, differing by a 1808 angle around Geh111i.
Keywords :
In-plane orientations , Germanium (Ge) islands , silicon carbide (SiC) , C-rich reconstructed surface , Epitaxy relationships , Reflection high-energy electron diffraction (RHEED)
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
Link To Document :