Record number :
Title of article :
In situ synthesis and characterization of pure SiC nanowires on silicon wafer
Author/Authors :
W. Yang*، نويسنده , , H. Araki، نويسنده , , S. Thaveethavorn، نويسنده , , H. Suzuki، نويسنده , , T. Noda، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
From page :
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Abstract :
A simple template/catalyst-free chemical vapor growth process was developed for growing SiC nanowire directly on silicon wafers. The nanowires were identified as single crystalline b-phase SiC growing along <1 1 1> direction. The nanowires possess Si–C chemistry. The length and thickness of the nanowires are generally from several tens to over 100 mm and 80 nm, respectively. The process also demonstrated the possibility of in situ deposition of thin graphite coatings on the SiC nanowires. A contribution of present work to the applications of SiC nanowires, especially as reinforcement materials in ceramic nanocomposites, is expected
Keywords :
SiC nanowires , In situ graphite coating , Chemical vapor growth
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
Link To Document :