Record number :
1000635
Title of article :
Electron irradiation effect on depth profiling of a SiO2/Si(1 0 0) surface by Auger electron spectroscopy
Author/Authors :
T. Yakabe، نويسنده , , D. Fujita and S. Tougaard، نويسنده , , K. Yoshihara، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
4
From page :
127
To page :
130
Abstract :
Electron irradiation effect on depth profiling of a SiO2/Si(1 0 0) surface has been studied. A theoretical model for electron stimulated desorption (ESD) and gas adsorption on the solid surface has been proposed. The ESD process on the solid surface has been evaluated by Auger electron spectroscopy (AES) combined with a depth profiling technique. Our model can explain the observed ESD effect in low electron current densities less than 30 A/m2. In higher current densities, the deviation from the model appears because dynamic diffusion process becomes dominant. Furthermore the dependencies of the ion sputtering rate and the depth resolution on the current density of the electron radiation have been observed quantitatively, whose origin has been discussed based on a model.
Keywords :
Electron stimulated desorption , adsorption , Ion sputtering rate , Depth resolution , Auger electron spectroscopy
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2005
Link To Document :
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