Record number :
1000620
Title of article :
Fabrication of Ti-nanowires in sapphire single crystals
Author/Authors :
Atsutomo Nakamura، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
5
From page :
38
To page :
42
Abstract :
We report electrical conductivity of Ti-nanowires in sapphire fabricated by utilizing lattice dislocations. We evaporated metallic Ti on a sapphire plate containing high density of uniaxial dislocations, and annealed the plate at high temperatures. As a result, it was found that Ti atoms intensely segregated along the dislocations within about 5 nm in diameter, indicating the formation of Ti-nanowires inside sapphire. Furthermore, the nanowires were confirmed to have significant electrical conductivity even in sapphire insulator
Keywords :
quantum wires , Electric conductivity , Sapphire , scanning probe microscope (SPM) , Dislocations
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2005
Link To Document :
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