Record number :
1000612
Title of article :
Interband Stark effects in InxGa1 xAs/InyAl1 yAs coupled step quantum wells
Author/Authors :
J.H. Kim، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
4
From page :
452
To page :
455
Abstract :
The effects of an electric field on the interband transitions in InxGa1 xAs/InyAl1 yAs coupled step quantum wells have been investigated both experimentally and theoretically. A InxGa1 xAs/InyAl1 yAs coupled step quantum well sample consisted of the two sets of a 50 A ° In0.53Ga0.47As shallow quantum well and a 50 A ° In0.65Ga0.35As deep step quantum well bounded by two thick In0.52Al0.48As barriers separated by a 30 A ° In0.52Al0.48As embedded potential barrier. The Stark shift of the interband transition energy in the InxGa1 xAs/InyAl1 yAs coupled step quantum well is larger than that of the single quantum well, and the oscillator strength in the InxGa1 xAs/InyAl1 yAs coupled step quantum well is larger than that in a coupled rectangular quantum well. These results indicate that InxGa1 xAs/InyAl1 yAs coupled step quantum wells hold promise for potential applications in optoelectron devices, such as tunable lasers.
Keywords :
Nanostructures , Electronic states , Optical properties
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2005
Link To Document :
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